Anisotropy of the magnetoresistance in Gd5Si2Ge2 -: art. no. 237203

被引:34
作者
Tang, H
Pecharsky, VK [1 ]
Samolyuk, GD
Zou, M
Gschneidner, KA
Antropov, VP
Schlagel, DL
Lograsso, TA
机构
[1] Iowa State Univ, Ames Lab, Mat & Engn Phys Program, Ames, IA 50011 USA
[2] Iowa State Univ, Dept Mat Sci & Engn, Ames, IA 50011 USA
[3] Iowa State Univ, Ames Lab, Condensed Matter Phys Program, Ames, IA 50011 USA
关键词
D O I
10.1103/PhysRevLett.93.237203
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
The observed magnetoresistance of single crystalline Gd5Si2Ge2 is negative and strongly anisotropic. The absolute values measured along the [100] and [010] directions exceed those parallel to the [001] direction by more than 60%. First principles calculations demonstrate that a structural modification is responsible for the anisotropy of the magnetoresistance, and that the latter is due to a significant reduction of electronic velocity in the [100] direction and the anisotropy of electrical conductivity.
引用
收藏
页码:237203 / 1
页数:4
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