Angle resolved photoemission spectroscopy of the InP(001) surface

被引:19
作者
Frisch, AM
Vogt, P
Visbeck, S
Hannappel, T
Willig, F
Braun, W
Richter, W
Bernholc, J
Schmidt, WG
Esser, N
机构
[1] Tech Univ Berlin, Inst Festkorperphys, Sekr PN6 1, D-10623 Berlin, Germany
[2] Hahn Meitner Inst Berlin GmbH, CD, D-14109 Berlin, Germany
[3] BESSY, D-12489 Berlin, Germany
[4] N Carolina State Univ, Dept Phys, Raleigh, NC 27695 USA
关键词
ARPES; InP(100); surface Brillouin zone;
D O I
10.1016/S0169-4332(00)00431-1
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
The P-rich (2X1)/(2X2) and the In-rich (2X4) reconstructions of InP(001) are studied by Angle Resolved Photoemission Spectroscopy (ARPES). Experimental results for the In-rich (2 X 4) InP(001) surface show two bound surface states and one surface resonance, located at - 1.6 eV binding energy. This agrees well with ab-initio calculations. For the P-rich (2 X 1)/(2 X 2) lnP(001) surface, neither theoretical nor experimental work regarding the electronic surface structure exists until now. We identify two possible surface states showing no discernible dispersion along the <(Gamma)over bar>-(J) over bar and <(Gamma)over bar>-(J) over bar' directions of the surface Brillouin zone (SBZ), The energetically highest state, located close to the valence band maximum (VBM), is only observed along the [(1) over bar 10] direction and is most likely a P-dimer-bond state. The second state, located at - 4.4 eV binding energy, is assigned to a surface resonance. (C) 2000 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:224 / 230
页数:7
相关论文
共 22 条
[1]   NONLOCAL PSEUDOPOTENTIAL CALCULATIONS FOR ELECTRONIC-STRUCTURE OF 11 DIAMOND AND ZINCBLENDE SEMICONDUCTORS [J].
CHELIKOWSKY, JR ;
COHEN, ML .
PHYSICAL REVIEW B, 1976, 14 (02) :556-582
[2]   GaP(001) and InP(001): Reflectance anisotropy and surface geometry [J].
Esser, N ;
Schmidt, WG ;
Bernholc, J ;
Frisch, AM ;
Vogt, P ;
Zorn, M ;
Pristovsek, M ;
Richter, W ;
Bechstedt, F ;
Hannappel, T ;
Visbeck, S .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1999, 17 (04) :1691-1696
[3]   Preparation of P-rich InP surfaces via MOCVD and surface characterization in UHV [J].
Hannappel, T ;
Visbeck, S ;
Knorr, K ;
Mahrt, J ;
Zorn, M ;
Willig, F .
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1999, 69 (04) :427-431
[4]  
HANNAPPEL T, Patent No. 19837851345
[5]   A MISSING-ROW DIMER MODEL OF INP(100) (4 X-2) RECONSTRUCTION AS PROPOSED BY LEED, UPS AND HREELS STUDIES [J].
HOU, XY ;
DONG, GS ;
DING, XM ;
WANG, X .
JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1987, 20 (09) :L121-L125
[6]   Angle-resolved photoelectron spectroscopy study of the InP(100)-(2x4) surface electronic structure [J].
Huff, WRA ;
Shimomura, M ;
Sanada, N ;
Kaneda, G ;
Takeuchi, T ;
Suzuki, Y ;
Yeom, HW ;
Abukawa, T ;
Kono, S ;
Fukuda, Y .
PHYSICAL REVIEW B, 1998, 57 (16) :10132-10137
[7]   OBSERVATION OF UMKLAPP AND SURFACE BANDS IN PHOTOEMISSION EXPERIMENT ON II-VI MATERIALS - A STUDY OF CD0.6HG0.4TE [J].
LEVEQUE, G ;
BANOUNI, M ;
JOUANIN, C ;
BERTHO, D ;
BONNET, J .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1993, 11 (03) :529-534
[8]   Example of a compound semiconductor surface that mimics silicon: The InP(001)-(2x1) reconstruction [J].
Li, L ;
Han, BK ;
Fu, Q ;
Hicks, RF .
PHYSICAL REVIEW LETTERS, 1999, 82 (09) :1879-1882
[9]   BAND-MAPPING OF INP-(100) ALONG THE GAMMA-X-LINE [J].
LODDERS, F ;
WESTHOF, J ;
SCHAEFER, JA ;
HOPFINGER, H ;
GOLDMANN, A ;
WITZEL, S .
ZEITSCHRIFT FUR PHYSIK B-CONDENSED MATTER, 1991, 83 (02) :263-266
[10]   Theory of photoemission in simple metals [J].
Mahan, G. D. .
PHYSICAL REVIEW B-SOLID STATE, 1970, 2 (11) :4334-4350