Direct evidence of spontaneous quantum dot formation in a thick InGaN epilayer

被引：46

作者：

Nistor, L

Bender, H

Vantomme, A

Wu, MF

Van Landuyt, J

O'Donnell, KP

Martin, R

Jacobs, K

Moerman, I

机构：

[1] Natl Inst Mat Phys, RO-76900 Bucharest, Romania

[2] IMEC, B-3001 Heverlee, Belgium

[3] Catholic Univ Louvain, Inst Kern & Stralingsfys, B-3001 Heverlee, Belgium

[4] Univ Antwerp, EMAT, B-2020 Antwerp, Belgium

[5] Univ Strathclyde, Dept Phys, Glasgow G4 0NG, Lanark, Scotland

[6] State Univ Ghent, IMEC, B-9000 Ghent, Belgium

来源：

APPLIED PHYSICS LETTERS | 2000年 / 77卷 / 04期

关键词：

D O I：

10.1063/1.127026

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report a direct observation of quantum dots formed spontaneously in a thick InGaN epilayer by high resolution transmission electron microscopy. Investigation of a (280 nm thick) In0.22Ga0.78N single layer, emitting in the blue/green spectral region, reveals quantum dots with estimated sizes in the range of 1.5-3 nm. Such sizes are in very good agreement with calculations based on the luminescence spectra of this specimen. (C) 2000 American Institute of Physics. [S0003-6951(00)00930-X].

引用

页码：507 / 509

页数：3

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