Room temperature persistent photoconductivity in GaP:S

被引：9

作者：

Zardas, GE ^{[1
]}

Theodorou, DE

Euthymiou, PC

Symeonides, CI

Riesz, F

Szentpall, B

机构：

[1] Univ Athens, Dept Phys, Solid State Sect, GR-10680 Athens, Greece

[2] Hungarian Acad Sci, Tech Phys Res Inst, Budapest, Hungary

来源：

SOLID STATE COMMUNICATIONS | 1998年 / 105卷 / 02期

关键词：

semiconductors; photoconductivity; recombination and trapping; photoelectron spectroscopy;

D O I：

10.1016/S0038-1098(97)10065-5

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The build-up and the decay of persistent photoconductivity (PP) have been measured at room temperature in GaP. The PP effect in our samples is attributed to the existence of defect clusters in the bulk material. Irradiation of the samples with a-particles generates defect clusters and enhances further the PP effect. Persistent photoconductivity at room temperature may have technical applications i.e. photon dose meters and image storage. (C) 1997 Elsevier Science Ltd.

引用

页码：77 / 79

页数：3

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