Surface passivation of n-type Czochralski silicon substrates by thermal-SiO2/plasma-enhanced chemical vapor deposition SiN stacks

被引：55

作者：

Larionova, Yevgeniya ^{[1
]}

Mertens, Verena ^{[1
]}

Harder, Nils-Peter ^{[1
,2
]}

Brendel, Rolf ^{[1
,3
]}

机构：

[1] Inst Solarenergieforsch Hameln Emmerthal ISFH, D-31860 Emmerthal, Germany

[2] Leibniz Univ Hannover, Inst Mat & Bauelemente Elekt, D-30167 Hannover, Germany

[3] Leibniz Univ Hannover, Inst Solid State Phys, D-30167 Hannover, Germany

来源：

APPLIED PHYSICS LETTERS | 2010年 / 96卷 / 03期

关键词：

annealing; passivation; plasma CVD; silicon compounds; surface recombination; RECOMBINATION VELOCITIES; CELLS; INTERFACE;

D O I：

10.1063/1.3291681

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The surface passivation properties of thermal-SiO2/plasma-enhanced chemical vapor deposition SiN stacks on 2.5 cm n-type Czochralski silicon substrates have been investigated. By annealing these stacks in air we achieve surface recombination velocities (SRV) lower than 2.4 cm/s for thin SiO2 layers. We find a clear correlation between the thickness of the oxide layers and the annealing duration. We also show that the absolute passivation quality of the SiO2/SiN stacks correlates to the SiO2 thickness. We find that the SRV increases with increasing oxide thickness. We also present data of the surface passivation of these SiO2/SiN stacks after storage in the dark for several weeks.

引用

页数：3

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