Control on the formation of Si nanodots fabricated by thermal annealing/oxidation of hydrogenated amorphous silicon

被引：4

作者：

Hazra, S

Sakata, I

Yamanaka, M

Suzuki, E

机构：

[1] Natl Inst Adv Ind Sci & Technol, Tsukuba, Ibaraki 3058568, Japan

[2] Univ Delaware, Ctr Composite Mat, Newark, DE 19716 USA

来源：

JOURNAL OF APPLIED PHYSICS | 2004年 / 96卷 / 12期

关键词：

D O I：

10.1063/1.1814172

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have fabricated silicon nanocrystals with different dimensions by the thermal annealing and thermal oxidation of ultrathin hydrogenated amorphous silicon (a-Si:H) films (2-10 nm) deposited by thermal chemical vapor deposition. Dimensions of silicon nanodots are the function of thickness of the ultrathin a-Si:H film. Therefore, we can change the dimensions of silicon nanodots (3-10 nm) by varying the a-Si:H film thickness according to our requirements. From our experimental studies, we have drawn a calibration curve of required a-Si:H film thickness against the average dimension of fabricated crystalline grains. (C) 2004 American Institute of Physics.

引用

页码：7532 / 7536

页数：5

共 39 条

[1] Detection of luminescent single ultrasmall silicon nanoparticles using fluctuation correlation spectroscopy [J].