Laser annealing of SiOx thin films

被引：28

作者：

Gallas, B

Kao, CC

Fisson, S

Vuye, G

Rivory, J

Bernard, Y

Belouet, C

机构：

[1] Lab Opt Solides, F-75252 Paris 05, France

[2] Lab Mineral, F-75252 Paris, France

[3] Alcatel CIT, Etablissement Marcoussis, F-91460 Marcoussis, France

来源：

APPLIED SURFACE SCIENCE | 2002年 / 185卷 / 3-4期

关键词：

laser annealing; nanocrystalline Si; silica matrix;

D O I：

10.1016/S0169-4332(01)00983-7

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

SiOx remains the main starting material for obtaining nanocrystalline Si embedded in a SiO2 matrix. A SiOx layer grown by co-evaporating Si and SiO2 has been successfully annealed using a KrF pulsed excimer laser operating at 248 rim. Abrasion of the film surface was observed above 85 mJ/cm(2) and phase separation between Si-rich and SiO2-rich phases was initiated above this fluence as observed by XPS. (C) 2002 Elsevier Science B.V. All rights reserved.

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收藏

页码：317 / 320

页数：4

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