Effects of uniaxial mechanical stress on drive current of 0.13 μm MOSFETs

被引：44

作者：

Wang, YG ^{[1
]}

Scott, DB ^{[1
]}

Wu, J ^{[1
]}

Waller, JL ^{[1
]}

Hu, J ^{[1
]}

Liu, K ^{[1
]}

Ukraintsev, V ^{[1
]}

机构：

[1] Texas Instruments Inc, SiTD, Dallas, TX 75243 USA

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2003年 / 50卷 / 02期

关键词：

drive current; mobility; MOSFET; series resistance; stress;

D O I：

10.1109/TED.2002.808450

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We study the effects of both. external mechanical stress and. I intrinsic stress due to trench isolation on drive currents of 0.13 mum-mode MOSFETs. The drive current, I-dsat, of PMOS is enhanced by about 13% while that of NMOS is reduced by about 9% upon applying a uniaxial compressive stress along the channel of L-physicial = 85 nm. The shifts in linear drive current, I-dlin, are-larger. By applying the external stress, we have simultaneously reproduced, for both PMOS and NMOS, the I-dsat and I-dlin shifts due to different gate-trench-isolation distances. We find that. the shifts by the applied stress, DeltaI(dsat)/l(dsat0) and DeltaI(dlin)/I-dlin0, decrease with decreasing gate length. The change in total resistance, Delta(V-ds/I-dlin), is a linear function of gate length. Because of the mobility dependence on external stress, we have also been able to extract source-drain series resistance, R-sd, by simply bending the wafer.

引用

页码：529 / 531

页数：3

共 13 条

[1] Practical accuracy analysis of some existing effective channel length and series resistance extraction methods for MOSFET's [J].