The growth of boron doped (100) textured diamond films by three-step process

被引：22

作者：

Chen, CS ^{[1
]}

Chen, CL

Lue, JT

机构：

[1] Natl Tsing Hua Univ, Dept Phys, Hsinchu, Taiwan

[2] Natl Tsing Hua Univ, Dept Elect Engn, Hsinchu, Taiwan

来源：

EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS | 2000年 / 11卷 / 01期

关键词：

D O I：

10.1051/epjap:2000139

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

p-type (100) faceted diamond films can be successfully grown by bubbling H-2 through liquid B(OCH3)(3) during the Microwave Plasma Enhanced Chemical Vapour Deposition (MPCVD). Ramann spectra and scanning electron micrographs SEM) convincingly illustrate that diamond-film growth on silicon substrates by a three-step process yields good uniformity with preferential orientation. The field emission current density of the boron doped diamond films can be enhanced from 0.7 mu A/cm(2) for the as grown films to 140 mu A/cm(2) at an applied field of 20 V/mu m by hydrogenation treatment.

引用

页码：3 / 8

页数：6

共 31 条

[21] The effect of diamond surface termination species upon field emission properties [J].