Hardening mechanisms of nanocrystalline Ti-Al-N solid solution films

被引：90

作者：

Liu, ZJ ^{[1
]}

Shum, PW ^{[1
]}

Shen, YG ^{[1
]}

机构：

[1] City Univ Hong Kong, Dept Mfg Engn & Engn Management, Kowloon, Hong Kong, Peoples R China

来源：

THIN SOLID FILMS | 2004年 / 468卷 / 1-2期

关键词：

hardening mechanisms; sputtering; titanium aluminum nitride;

D O I：

10.1016/j.tsf.2004.05.087

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Nanocrystalline Ti1-x AlxN (0 less than or equal to x less than or equal to 0.41) solid solution films were produced by reactive unbalanced close-field magnetron sputtering. Nanoindentation measurements showed that the hardness of Ti1-x,AlxN films increased monotonously with the content of Al. A calculation based on a semiempirical method revealed that the effect of intrinsic hardening, which arises from the change of the nature of atomic bonding due to the incorporation of Al atoms into TiN lattice, played a negligible role in the observed hardening phenomena. Further analysis revealed that the grain boundary hardening was also very weak and the improvement of hardness of Ti1-xAlxN films with relatively low content of Al (x less than or equal to 0.33) could be well explained by the Fleischer model of solid solution hardening. However, for Ti1-xAlxN films with x>0.33, an obvious deviation from the solid solution hardening was observed, probably due to the grain boundary segregation of solutes that might lead to an enhanced effect of grain boundary hardening when the amount of Al is high. (C) 2004 Elsevier B.V All rights reserved.

引用

页码：161 / 166

页数：6

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