Vacancy hardening in single-crystal TiNx(001) layers

被引:155
作者
Shin, CS
Gall, D
Hellgren, N
Patscheider, J
Petrov, I
Greene, JE
机构
[1] Univ Illinois, Dept Mat Sci, Urbana, IL 61801 USA
[2] Univ Illinois, Mat Res Lab, Urbana, IL 61801 USA
[3] Swiss Fed Labs Mat Testing & Res, CH-8600 Dubendorf, Switzerland
关键词
D O I
10.1063/1.1568521
中图分类号
O59 [应用物理学];
学科分类号
摘要
We investigate the effect of N vacancies on the mechanical properties of epitaxial delta-TiNx(001) layers with x = 0.67-1.0. The relaxed lattice parameter increases linearly with x in good agreement with ab initio density functional calculations, indicating that deviations from stoichiometry are entirely due to anion vacancies. Hardness values increase continuously, while the elastic modulus decreases with increasing N-vacancy concentration. We attribute the observed vacancy hardening to a reduced dislocation mobility arising from an increase in the rate-limiting activation energy for cation migration. (C) 2003 American Institute of Physics.
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页码:6025 / 6028
页数:4
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