Solid state interdiffusions in epitaxial Fe/GaAs(001) heterostructures during ultrahigh vacuum annealings up to 450°C

被引：60

作者：

Lepine, B

Ababou, S

Guivarc'h, A

Jezequel, G

Deputier, S

Guerin, R

Filipe, A

Schuhl, A

Abel, F

Cohen, C

Rocher, A

Crestou, J

机构：

[1] Univ Rennes 1, CNRS, UMR 6627, Equipe Phys Surfaces & Interfaces, F-35042 Rennes, France

[2] Univ Rennes 1, Chim Solide & Inorgan Mol Lab, CNRS, UMR 6511, F-35042 Rennes, France

[3] Thomson CSF, CNRS, UMR 137, F-91404 Orsay, France

[4] Univ Paris 07, CNRS, Grp Phys Solide, F-75251 Paris, France

[5] CNRS, CEMES, F-31055 Toulouse, France

来源：

JOURNAL OF APPLIED PHYSICS | 1998年 / 83卷 / 06期

关键词：

D O I：

10.1063/1.367063

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have used a set of complementary experimental techniques to characterize an epitaxial structure (25 nm Fe)/GaAs(001) annealed at 450 degrees C under ultrahigh vacuum conditions. The solid state interdiffusion leads to the formation of an epitaxial reaction layer made of Fe2As patches embedded in a Ga rich Fe3Ga2-XAsX ternary phase. The epitaxial character of this layer explains how the usually reported epitaxial growth of Fe on GaAs performed in the temperature range of 175 to 225 degrees C is possible in spite of the species intermixing occurring at the interface. Moreover, the observed grains of Fe2As explain the decrease of magnetization at the interface in such contact, since Fe2As is an antiferromagnetic alloy. (C) 1998 American Institute of Physics.

引用

页码：3077 / 3080

页数：4

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