Current modulation of a hygroscopic insulator organic field-effect transistor

被引：37

作者：

Bäcklund, TG ^{[1
]}

Sandberg, HGO ^{[1
]}

Osterbacka, R ^{[1
]}

Stubb, H ^{[1
]}

机构：

[1] Abo Akad Univ, Dept Phys, FI-20500 Turku, Finland

来源：

APPLIED PHYSICS LETTERS | 2004年 / 85卷 / 17期

关键词：

D O I：

10.1063/1.1811798

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have fabricated solution processable polymer transistors with high conductivity, requiring only a few volts for obtaining good current modulation. The devices can be fabricated and operated in air and the operation is greatly enhanced in humid atmosphere. Devices reach an On/Off ratio of about 600 and a subthreshold swing of 500 mV per decade operating on voltages less than 2 V. In this letter the mechanism behind the current modulation is investigated, and we show that the current is modulated through ion-assisted oxidation and reduction of the semiconductor by ions moving vertically in the insulator material to the transistor channel. (C) 2004 American Institute of Physics.

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页码：3887 / 3889

页数：3

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