Anisotropic magnetoresistance in manganites: experiment and theory

被引：26

作者：

Fuhr, J. D. ^{[1
]}

Granada, M. ^{[1
]}

Steren, L. B. ^{[1
]}

Alascio, B. ^{[1
]}

机构：

[1] Consejo Nacl Invest Cient & Tecn, CNEA, Ctr Atom Bariloche, RA-8400 San Carlos De Bariloche, Rio Negro, Argentina

来源：

JOURNAL OF PHYSICS-CONDENSED MATTER | 2010年 / 22卷 / 14期

关键词：

THIN-FILMS; LA1-XSRXMNO3; RESISTIVITY; SPIN;

D O I：

10.1088/0953-8984/22/14/146001

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

We present measurements of the anisotropic magnetoresistance (AMR) of La(0.75)Sr(0.25)MnO(3) films deposited on (001) SrTiO(3) substrates, and a model that describes the experimental results. The model, based on the electronic structure of manganites plus the spin-orbit coupling, correctly accounts for the dependence of the AMR on the direction of the current to the crystalline axes. We measure an AMR of the order of 10(-3) for the current I parallel to the [100] axis of the crystal and vanishing AMR for I parallel to [110], in agreement with the model predictions. Further, we calculate the planar Hall effect and show its connection to AMR.

引用

页数：6

共 19 条

[1] Giant planar Hall effect in colossal magnetoresistive La0.84Sr0.16MnO3 thin films [J].