Direct characterization of ultraviolet-light-induced refractive index structures by scanning near-field optical microscopy

被引：5

作者：

Svalgaard, M ^{[1
]}

Madsen, S

Hvam, JM

Kristensen, M

机构：

[1] Tech Univ Denmark, Microelekt Centret, DK-2800 Lyngby, Denmark

[2] Danish Micro Eng AS, Herlev, Denmark

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 1998年 / 10卷 / 06期

关键词：

scanning near-field optical microscopy (SNOM); silica-on-silicon; ultraviolet-induced index changes (photosensitivity);

D O I：

10.1109/68.681506

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have applied a reflection scanning near-field optical microscope to directly probe ultraviolet (UV)-light-induced refractive index structures in planar glass samples. This technique permits direct comparison between topography and refractive index changes (10(-5)-10(-3)) with submicrometer lateral resolution, The proposed method yields detailed information about the topography and index profiles of UV-written waveguides.

引用

页码：848 / 850

页数：3

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