Micromachined SU8 negative resist for MMIC applications on low resistivity CMOS substrates

被引：4

作者：

Elgaid, K ^{[1
]}

McCloy, DA ^{[1
]}

Thayne, IG ^{[1
]}

机构：

[1] Univ Glasgow, Dept Elect & Elect Engn, Nanoelectr Res Ctr, Glasgow G12 8LT, Lanark, Scotland

来源：

MICROELECTRONIC ENGINEERING | 2003年 / 67-8卷

关键词：

SU8 negative resist; CPW lines on low resistivity silicon; micromachined CPW on Si;

D O I：

10.1016/S0167-9317(03)00188-6

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this work we report a novel method of fabricating low loss coplanar waveguides (CPW) on CMOS grade low resistivity silicon (2Omega-cm) substrates using a micro-machined SU8 negative resist as a dielectric interface layer. S parameter measurements up 110 GHz and electromagnetic analysis was used to determine the performance of the CPW on the SU8 dielectric interface layer. An attenuation of less than 0.6 dB/mm at 60 GHz was achieved. (C) 2003 Elsevier Science B.V. All rights reserved.

引用

页码：417 / 421

页数：5

共 4 条

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Ternent, G ;

Ferguson, S ;

Borsosfoldi, Z ;

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Lohdi, T ;

Edger, D ;

Wilkinson, CDW ;

Thayne, IG .

ELECTRONICS LETTERS, 1999, 35 (22) :1957-1958

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