Coplanar waveguide transmission lines and high Q inductors on CMOS grade silicon using photoresist and polyimide

被引：9

作者：

Ternent, G ^{[1
]}

Ferguson, S ^{[1
]}

Borsosfoldi, Z ^{[1
]}

Elgaid, K ^{[1
]}

Lohdi, T ^{[1
]}

Edger, D ^{[1
]}

Wilkinson, CDW ^{[1
]}

Thayne, IG ^{[1
]}

机构：

[1] Univ Glasgow, Dept Elect & Elect Engn, Glasgow G12 8QQ, Lanark, Scotland

来源：

ELECTRONICS LETTERS | 1999年 / 35卷 / 22期

关键词：

D O I：

10.1049/el:19991298

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Gold coplanar waveguide (CPW) transmission lines with losses of < 0.5dB/mm at 60GHz have been produced on CMOS grade silicon substrates using a 15 mu m thick layer of either photoresist or polyimide. This process, together with an electroplated interconnect technique, has been used to produce spiral inductors on a 2 Omega/cm n-Si substrate with a Q of 15 and L of 1.2nH at 6GHz.

引用

页码：1957 / 1958

页数：2

共 8 条

[1] A 70-GHz f(T) low operating bias self-aligned p-type SiGe MODFET [J].

Arafa, M ;

Ismail, K ;

Chu, JO ;

Meyerson, BS ;

Adesida, I .

IEEE ELECTRON DEVICE LETTERS, 1996, 17 (12) :586-588

[2] Integrated RF components in a SiGe bipolar technology [J].

Burghartz, JN ;

Soyuer, M ;

Jenkins, KA ;

Kies, M ;

Dolan, M ;

Stein, KJ ;

Malinowski, J ;

Harame, DL .

IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1997, 32 (09) :1440-1445

[3]

Kim CS, 1998, IEEE MICROW GUIDED W, V8, P293, DOI 10.1109/75.704599

[4]

Lau W, 1999, MICROWAVES RF, V38, P140

[5] Microwave CMOS - Device physics and design [J].

Manku, T .

IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1999, 34 (03) :277-285

[6] Characterization of a planar spiral inductor on a composite-resin low-impedance substrate and its application to microwave circuits [J].

Okabe, H ;

Yamada, H ;

Yamasaki, M ;

Kagaya, O ;

Sekine, K ;

Yamashita, K .

IEEE TRANSACTIONS ON COMPONENTS PACKAGING AND MANUFACTURING TECHNOLOGY PART B-ADVANCED PACKAGING, 1998, 21 (03) :269-273

[7] Si and SiGe millimeter-wave integrated circuits [J].

Russer, P .

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1998, 46 (05) :590-603

[8]

WAMS C, 1998, IEEE T MTT, V46, P616

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