High-temperature leakage improvement in metal-insulator-metal capacitors by work-function tuning

被引:49
作者
Chiang, K. C. [1 ]
Cheng, C. H.
Pan, H. C.
Hsiao, N.
Chou, C. P.
Chin, Albert
Hwang, H. L.
机构
[1] Natl Chiao Tung Univ, Dept Elect Engn, Hsinchu 30010, Taiwan
[2] Natl Chiao Tung Univ, Dept Mech Engn, Hsinchu 30056, Taiwan
[3] Natl Appl Res Labs, Instrument Technol Res Ctr, Hsinchu 300, Taiwan
关键词
capacitor; high temperature; metal-insulator-metal (MIM); Ni; thermal leakage;
D O I
10.1109/LED.2007.891265
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Using low-cost and high work-function Ni, a low leakage current of 5 x 10(-6) A/cm(2) at 125 degrees C is obtained in a high 25-fF/mu m(2)-density SrTiO3 metal-insulator-metal (MIM) capacitor processed at 400 degrees C. This is approximately two orders of magnitude better than the same device using a TaN electrode, with added advantages of improved voltage and temperature coefficients of capacitance. This work-function tuning method also has merit for achieving both low thermal leakage and high overall k value beyond previous laminate structure.
引用
收藏
页码:235 / 237
页数:3
相关论文
共 16 条
[1]   Analog characteristics of metal-insulator-metal capacitors using PECVD nitride dielectrics [J].
Babcock, JA ;
Balster, SG ;
Pinto, A ;
Dirnecker, C ;
Steinmann, P ;
Jumpertz, R ;
El-Kareh, B .
IEEE ELECTRON DEVICE LETTERS, 2001, 22 (05) :230-232
[2]   High-performance SrTiO3 MIM capacitors for analog applications [J].
Chiang, K. C. ;
Huang, Ching-Chien ;
Chen, G. L. ;
Chen, Wen Jauh ;
Kao, H. L. ;
Wu, Yung-Hsien ;
Chin, Albert ;
McAlister, Sean P. .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2006, 53 (09) :2312-2319
[3]  
Chiang KC, 2005, 2005 SYMPOSIUM ON VLSI TECHNOLOGY, DIGEST OF TECHNICAL PAPERS, P62
[4]   Very high-density (23 fF/μm2) RF MIM capacitors using high-k TaTiO as the dielectric [J].
Chiang, KC ;
Lai, CH ;
Chin, A ;
Wang, TJ ;
Chiu, HF ;
Chen, JR ;
McAlister, SP ;
Chi, CC .
IEEE ELECTRON DEVICE LETTERS, 2005, 26 (10) :728-730
[5]   High-κ Ir/TiTaO/TaN capacitors suitable for analog IC applications [J].
Chiang, KC ;
Huang, CC ;
Chin, A ;
Chen, WJ ;
McAlister, SP ;
Chiu, HF ;
Chen, JR ;
Chi, CC .
IEEE ELECTRON DEVICE LETTERS, 2005, 26 (07) :504-506
[6]  
CHIANG KC, 2006, VLSI S, P126
[7]  
Gervais F., 1991, HDB OPTICAL CONSTANT, P1035
[8]  
HU H, 2003, IEDM, P379
[9]  
HUNG CM, 1998, P IEEE MTT S INT MIC, P505
[10]  
Jeong YK, 2004, 2004 SYMPOSIUM ON VLSI TECHNOLOGY, DIGEST OF TECHNICAL PAPERS, P222