High-performance SrTiO3 MIM capacitors for analog applications

被引：87

作者：

Chiang, K. C. ^{[1
]}

Huang, Ching-Chien

Chen, G. L.

Chen, Wen Jauh

Kao, H. L.

Wu, Yung-Hsien

Chin, Albert

McAlister, Sean P.

机构：

[1] Natl Chiao Tung Univ, Dept Elect Engn, Nanometer Ctr, Hsinchu 300, Taiwan

[2] Natl Pingtung Univ Sci & Technol, Grad Inst Mat Engn, Pingtung 91201, Taiwan

[3] Chang Gung Univ, Dept Elect Engn, Taoyuan 333, Taiwan

[4] Natl Tsing Hua Univ, Dept Engn & Syst Sci, Hsinchu 30013, Taiwan

[5] Natl Res Council Canada, Ottawa, ON K1A 0R6, Canada

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2006年 / 53卷 / 09期

关键词：

capacitor; International Technology Roadmap for Semiconductors (ITRS); metal-insulator-metal (MIM); SrTiO3 (STO);

D O I：

10.1109/TED.2006.881013

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

TAN/SrTiO3/TaN capacitors with a capacitance density of 28-35 fF/mu m(2) have been developed by using a high-kappa (kappa = 147-169) SrTiO3 dielectric containing nanometersized microcrystals (3-10 nm). A small capacitance effective thickness was achieved by reducing the interfacial TaON using N+ treatment on the lower TaN electrode during post-deposition annealing. The small (92 ppm/V-2) voltage coefficient of the capacitance and the 3 x 10(-8) A/cm(2) leakage current at 2 V exceed the International Technology Roadmap for Semiconductors' requirements for analog capacitors at year 2018.

引用

页码：2312 / 2319

页数：8

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