Very high-mobility organic single-crystal transistors with in-crystal conduction channels

被引:618
作者
Takeya, J. [1 ]
Yamagishi, M.
Tominari, Y.
Hirahara, R.
Nakazawa, Y.
Nishikawa, T.
Kawase, T.
Shimoda, T.
Ogawa, S.
机构
[1] Osaka Univ, Grad Sch Sci, Toyonaka, Osaka 5600043, Japan
[2] Seiko Epson Corp, Nagano 3990293, Japan
[3] Iwate Univ, Fac Engn, Dept Chem Engn, Morioka, Iwate 0208551, Japan
关键词
D O I
10.1063/1.2711393
中图分类号
O59 [应用物理学];
学科分类号
摘要
Very high-mobility organic transistors are fabricated with purified rubrene single crystals and high-density organosilane self-assembled monolayers. The interface with minimized surface levels allows carriers to distribute deep into the crystals by more than a few molecular layers under weak gate electric fields, so that the inner channel plays a significant part in the transfer performance. With the in-crystal carriers less affected by scattering mechanisms at the interface, the maximum transistor mobility reaches 18 cm(2)/V s and the contact-free intrinsic mobility turned out to be 40 cm(2)/V s as the result of four-terminal measurement. These are the highest values ever reported for organic transistors. (c) 2007 American Institute of Physics.
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页数:3
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