Very high-mobility organic transistors are fabricated with purified rubrene single crystals and high-density organosilane self-assembled monolayers. The interface with minimized surface levels allows carriers to distribute deep into the crystals by more than a few molecular layers under weak gate electric fields, so that the inner channel plays a significant part in the transfer performance. With the in-crystal carriers less affected by scattering mechanisms at the interface, the maximum transistor mobility reaches 18 cm(2)/V s and the contact-free intrinsic mobility turned out to be 40 cm(2)/V s as the result of four-terminal measurement. These are the highest values ever reported for organic transistors. (c) 2007 American Institute of Physics.
机构:
Univ Groningen, Ctr Mat Sci, Solid State Chem Lab, NL-9747 AG Groningen, NetherlandsUniv Groningen, Ctr Mat Sci, Solid State Chem Lab, NL-9747 AG Groningen, Netherlands
Jurchescu, OD
;
Palstra, TTM
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Univ Groningen, Ctr Mat Sci, Solid State Chem Lab, NL-9747 AG Groningen, NetherlandsUniv Groningen, Ctr Mat Sci, Solid State Chem Lab, NL-9747 AG Groningen, Netherlands
机构:
Univ Groningen, Ctr Mat Sci, Solid State Chem Lab, NL-9747 AG Groningen, NetherlandsUniv Groningen, Ctr Mat Sci, Solid State Chem Lab, NL-9747 AG Groningen, Netherlands
Jurchescu, OD
;
Palstra, TTM
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h-index: 0
机构:
Univ Groningen, Ctr Mat Sci, Solid State Chem Lab, NL-9747 AG Groningen, NetherlandsUniv Groningen, Ctr Mat Sci, Solid State Chem Lab, NL-9747 AG Groningen, Netherlands