Peripheral dose measurement with a MOSFET detector

被引：27

作者：

Butson, MJ ^{[1
]}

Cheung, T

Yu, PKN

机构：

[1] City Univ Hong Kong, Dept Phys & Mat Sci, Kowloon, Hong Kong, Peoples R China

[2] Illawarra Canc Care Ctr, Dept Med Phys, Wollongong, NSW 2500, Australia

来源：

APPLIED RADIATION AND ISOTOPES | 2005年 / 62卷 / 04期

关键词：

MOSFET; dosimetry; accuracy; X-rays; high energy;

D O I：

10.1016/j.apradiso.2004.09.001

中图分类号：

O61 [无机化学];

学科分类号：

070301 ; 081704 ;

摘要：

The accuracy of a MOSFET dosimetry system with respect to peripheral therapeutic doses from high-energy X-rays has been evaluated. The results have been compared with ionisation chamber measurements in the same peripheral regions of the beam. For 6 MV and 18 MV X-ray beams, the MOSFET system in the high-sensitivity mode produces reproducibility of dose measurement with relative standard deviations within 1% of the maximal dose in the beam, if the measurement is made upto 15 cm away from the beam edge. The results have shown that the MOSFET device can adequately measure peripheral doses, which would be beneficial for in vivo dose assessments in radiotherapy. (C) 2004 Elsevier Ltd. All rights reserved.

引用

页码：631 / 634

页数：4

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