Single-electron charging effects in Nb/Nb oxide-based single-electron transistors at room temperature

被引：95

作者：

Shirakashi, J

Matsumoto, K

Miura, N

Konagai, M

机构：

[1] Electrotech Lab, Tsukuba, Ibaraki 305, Japan

[2] Tokyo Inst Technol, Meguro Ku, Tokyo 152, Japan

来源：

APPLIED PHYSICS LETTERS | 1998年 / 72卷 / 15期

关键词：

D O I：

10.1063/1.121218

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have reported the single-electron charging effects in Nb/Nb oxide-based single-electron transistors (SETs) at room temperature (T=298 K). The SETs were first fabricated by a scanning probe microscope based anodic oxidation. Then, the miniaturization of tunnel junctions was performed by thermal oxidation. Ultra-low-capacitance tunnel junctions were easily obtained by utilizing both kinds of oxidation processes, which realizes room-temperature Nb-based SETs. (C) 1998 American Institute of Physics.

引用

页码：1893 / 1895

页数：3

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