Learning Abilities Achieved by a Single Solid-State Atomic Switch

被引：314

作者：

Hasegawa, Tsuyoshi ^{[1
]}

Ohno, Takeo ^{[1
]}

Terabe, Kazuya ^{[1
]}

Tsuruoka, Tohru ^{[1
]}

Nakayama, Tomonobu ^{[1
]}

Gimzewski, James K. ^{[2
]}

Aono, Masakazu ^{[1
]}

机构：

[1] Natl Inst Mat Sci, WPI Ctr Mat Nanoarchitecton MANA, Tsukuba, Ibaraki 3050044, Japan

[2] Univ Calif Los Angeles, Dept Chem & Biochem, Los Angeles, CA 90095 USA

来源：

ADVANCED MATERIALS | 2010年 / 22卷 / 16期

关键词：

ELECTROCHEMICAL REACTION; MEMORIES;

D O I：

10.1002/adma.200903680

中图分类号：

O6 [化学];

学科分类号：

070301 [无机化学];

摘要：

Learning abilities are demonstrated using a single solid-state atomic switch, wherein the formation and dissolution of a metal filament are controlled depending on the history of prior switching events. The strength of the memorization level gradually increases when the number of input signals is increased. Once the filament forms a bridge, electrons flow in a ballistic mode and long-term memorization is achieved (see figure).

引用

页码：1831 / +

页数：5

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