Quantification of the extent of reaction in a negative, novolac-based, chemically amplified resist

被引:9
作者
Dentinger, PM [1 ]
Taylor, JW [1 ]
机构
[1] Univ Wisconsin, Ctr Xray Lithog, Stoughton, WI 53589 USA
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1997年 / 15卷 / 06期
关键词
D O I
10.1116/1.589698
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A technique for determining the extent of reaction and the molar absorptivity of the Fourier transform infrared (FTIR) peak created during the postexposure bake (PEB) reaction of the negative e-beam/x-ray Shipley resist, SAL 605, is described. Wafers were oven baked within a gas-tight bomb. The product of the linking reaction, methanol, was quantified from the gas in the bomb and within the resist film after the PEB. The ether peak, corresponding to the reaction between hexamethoxymethylmelamine (HMMM) and novolac was measured on the same wafer using FTIR. In addition, the absolute number of HMMM molecules reacted was measured by,eel permeation chromatography to yield the number of moles methanol produced/HMMM reacted. The molar absorptivity for the ether peak, resulting from a reaction between an HMMM and a phenolic site on the novolac is 3.14 +/- 0.53 x 10(5) cm(2)/mole. Under conditions sufficient for imaging in a 0.5 mu m thick film, the average number of reactions/HMMM molecule is 1.27 +/- 0.24. From previous work on the acid concentration in this resist [P. M. Dentinger, C. M. Nelson, S. J. Rhyner, J. W. Taylor, T. H. Fedynyshyn, and M. F. Cronin, J. Vac. Sci. Technol. B 14, 4239 (1996)] each acid moiety created was found to catalyze an average of 26 +/- 8 events during the PEB process. It appears that no more than 1.5%-2% of the available phenolic sites in the film need to be reacted for the required differential dissolution rate, and that the film does not crosslink. The ramifications of this work on modeling this type of resist will also be discussed. (C) 1997 American Vacuum Society.
引用
收藏
页码:2632 / 2638
页数:7
相关论文
共 24 条
[1]   PREBAKE EFFECTS IN CHEMICAL AMPLIFICATION ELECTRON-BEAM RESIST [J].
AZUMA, T ;
MASUI, K ;
TAKIGAMI, Y ;
SASAKI, H ;
SAKAI, K ;
NOMAKI, T ;
KATO, Y ;
MORI, I .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1991, 30 (11B) :3138-3141
[2]   CROSSLINKING KINETICS AND NETWORK FORMATION IN ORGANIC COATINGS CONTAINING HEXAMETHOXYMETHYLMELAMINE [J].
BAUER, DR ;
BUDDE, GF .
JOURNAL OF APPLIED POLYMER SCIENCE, 1983, 28 (01) :253-266
[3]  
BLANK WJ, 1979, J COATING TECHNOL, V51, P61
[4]   PROCESS ENHANCEMENTS FOR POSITIVE TONE SILYLATION [J].
CALABRESE, GS ;
BOHLAND, JF ;
PAVELCHEK, EK ;
SINTA, R ;
DUDLEY, BW ;
JONES, SK ;
FREEMAN, PW .
MICROELECTRONIC ENGINEERING, 1993, 21 (1-4) :231-234
[5]  
deGrandpre M., 1988, Proceedings of the SPIE - The International Society for Optical Engineering, V923, P158, DOI 10.1117/12.945645
[6]   PATTERNING CHARACTERISTICS OF A CHEMICALLY-AMPLIFIED NEGATIVE RESIST IN SYNCHROTRON RADIATION LITHOGRAPHY [J].
DEGUCHI, K ;
MIYOSHI, K ;
ISHII, T ;
MATSUDA, T .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1992, 31 (9A) :2954-2958
[7]   Resist application effects on chemically amplified resist response [J].
Dentinger, PM ;
Nelson, CM ;
Rhyner, SJ ;
Taylor, JW ;
Fedynyshyn, TH ;
Cronin, MF .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1996, 14 (06) :4239-4245
[8]  
ECKES C, 1991, P SOC PHOTO-OPT INS, V1466, P394, DOI 10.1117/12.46388
[9]   PROCESS OPTIMIZATION OF THE ADVANCED NEGATIVE ELECTRON-BEAM RESIST SAL605 [J].
FEDYNYSHYN, TH ;
CRONIN, MF ;
POLI, LC ;
KONDEK, C .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1990, 8 (06) :1454-1460
[10]   EFFECT OF ACID DIFFUSION ON PERFORMANCE IN POSITIVE DEEP-ULTRAVIOLET RESISTS [J].
FEDYNYSHYN, TH ;
THACKERAY, JW ;
GEORGER, JH ;
DENISON, MD .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1994, 12 (06) :3888-3894