A novel study of the growth and resistivity of nanocrystalline Pt films obtained from Pt(acac)2 in the presence of oxygen or water vapor

被引：20

作者：

Battiston, GA

Gerbasi, R

Rodriguez, A

机构：

[1] CNR, Ist Chim Inorgan & Superfici, I-35127 Padua, Italy

[2] Univ La Laguna, Dept Inorgan Chem, E-38200 San Cristobal la Laguna, Spain

来源：

CHEMICAL VAPOR DEPOSITION | 2005年 / 11卷 / 03期

关键词：

D O I：

10.1002/cvde.200404201

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

The properties of films deposited from Pt(acac)2 in the presence of oxygen, were compared with those obtained using water vapor as the reacting gas. The analysis determined the growth rate on glass substrates and characterized film features such as crystallinity, resistivity, film texture, and morphology within the temperature range 240-440°C. It was observed that growth rate of Pt(acac)2 in the presence of either oxygen or water vapor exhibit typical Arrhenius behavior at low temperatures. It was also observed that the decomposition of Pt(acac)2 assumed different characteristics in the presence of O2 and H2O.

引用

页码：130 / 135

页数：6

共 40 条

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