Defect engineering radiation tolerant silicon detectors

It is planned to use silicon detectors for many applications at the CERN Large Hadron Collider, where they will be exposed to unprecedented particle fluences. After hadronic irradiation, such detectors exhibit macroscopic changes in their electrical characteristics which lead to a degradation in performance. It is shown that these changes can be explained at the microscopic level using a combination of defect kinetics, defect characterisation of irradiated devices and device models. New results include evidence for inter-centre charge transfer between clustered defects and indications of multi-interstitial and multi-vacancy related defects. Finally, the work of the ROSE Collaboration (CERN RD48), whose aim is to defect engineer more radiation tolerant detectors, is described.