Quantitative model of radiation induced charge trapping in SiO2

被引：27

作者：

Conley, JF

Lenahan, PM

Wallace, BD

Cole, P

机构：

[1] Dynam Res Corp, Commercial Syst, Beaverton, OR 97006 USA

[2] Penn State Univ, Dept Engn Sci & Mech, University Pk, PA 16801 USA

[3] USN, Ctr Surface Warfare, Crane, IN 47522 USA

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1997年 / 44卷 / 06期

关键词：

D O I：

10.1109/23.658946

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A predictive model of radiation induced oxide charging, based on statistical thermodynamics and electron spin resonance measurements of defects known as E' centers, has been developed. The model is successfully tested on Co-60 irradiated MOSFETs.

引用

页码：1804 / 1809

页数：6

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