Photoluminescence from sub-nanometer-thick GaN/Al0.8Ga0.2N quantum wells

被引：8

作者：

Someya, T

Hoshino, K

Harris, JC

Tachibana, K

Arakawa, Y

机构：

[1] Univ Tokyo, Adv Sci & Technol Res Ctr, Meguro Ku, Tokyo 1538904, Japan

[2] Univ Tokyo, Inst Ind Sci, Minato Ku, Tokyo 1068558, Japan

来源：

APPLIED PHYSICS LETTERS | 2000年 / 77卷 / 09期

关键词：

D O I：

10.1063/1.1290151

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Photoluminescence (PL) spectra were measured for sub-nanometer-thick GaN quantum wells (QWs) with Al0.8Ga0.2N barriers, which were grown by atmospheric-pressure metal-organic chemical-vapor deposition. The thickness of the GaN QW layers was systematically varied from 1 to 4 ML. We clearly observed a PL peak at room temperature at a wavelength as short as 247 nm (5.03 eV) from 1-ML-thick QWs. The effective confinement energy, or difference between this recombination energy and the band gap of bulk GaN, is as large as 1.63 eV. (C) 2000 American Institute of Physics. [S0003-6951(00)02235-X].

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页码：1336 / 1338

页数：3

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