Two-photon absorption and Kerr coefficients of silicon for 850-2200 nm

被引:541
作者
Bristow, Alan D.
Rotenberg, Nir
van Driel, Henry M.
机构
[1] Univ Toronto, Dept Phys, Toronto, ON M5S 1A7, Canada
[2] Univ Toronto, Inst Opt Sci, Toronto, ON M5S 1A7, Canada
基金
加拿大自然科学与工程研究理事会;
关键词
D O I
10.1063/1.2737359
中图分类号
O59 [应用物理学];
学科分类号
摘要
The degenerate two-photon absorption coefficient beta and Kerr nonlinearity n(2) are measured for bulk Si at 300 K using 200 fs pulses with carrier wavelength of 850 <lambda < 2200 nm for which indirect gap transitions occur. With a broad peak near the indirect gap and maximum value of 2 +/- 0.5 cm/GW, the dispersion of beta compares favorably with theoretical calculations of Garcia and Kalyanaraman [J. Phys. B 39, 2737 (2006)]. Within our wavelength range, n(2) varies by a factor of 4 with a peak value of 1.2x10(-13) cm(2)/W at lambda=1800 nm. (C) 2007 American Institute of Physics.
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页数:3
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