GaNyAs1-x-yBix alloy lattice matched to GaAs with 1.3μm photoluminescence emission

被引：22

作者：

Huang, W ^{[1
]}

Yoshimoto, M ^{[1
]}

Takehara, Y ^{[1
]}

Saraie, J ^{[1
]}

Oe, K ^{[1
]}

机构：

[1] Kyoto Inst Technol, Dept Elect & Informat Sci, Kyoto 6068585, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 2004年 / 43卷 / 10B期

关键词：

GaNyAs(1-x-y)Bi(x); PL emission; lattice matching; MBE growth; temperature dependence;

D O I：

10.1143/JJAP.43.L1350

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

GaNyAs1-x-yBix alloy was grown by molecular beam epitaxy. The lattice matching between the GaNyAs1-x-yBix epilayer and the GaAs substrate was achieved by adjusting the N composition used in this experiment. Photoluminescence (PL) at the wavelength of 1.3mum was observed at room temperature for the GaNyAs1-x-yBix epilayer lattice matched to the GaAs substrate. The temperature coefficient of the PL peak energy for this GaNyAs1-x-yBix epilayer in the temperature range of 150-300K was 0.14meV/K which was much smaller than the temperature dependence of the band gap of GalnAsP alloy.

引用

页码：L1350 / L1352

页数：3

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