Si self-interstitial injection from Sb complex formation in Si

被引：15

作者：

Fage-Pedersen, J ^{[1
]}

Gaiduk, P ^{[1
]}

Hansen, JL ^{[1
]}

Larsen, AN ^{[1
]}

机构：

[1] Aarhus Univ, Inst Phys & Astron, DK-8000 Aarhus C, Denmark

来源：

JOURNAL OF APPLIED PHYSICS | 2000年 / 88卷 / 06期

关键词：

D O I：

10.1063/1.1289234

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

It has recently been established that Si self-interstitials are generated during annealing of high-concentration Sb layers in Si. In the present work, we make use of samples grown with molecular-beam epitaxy. We monitor, at different times and temperatures, the diffusion enhancement or retardation of deep B or Sb marker layers next to a 1.1x10(20) cm(-3) Sb box, as well as the formation of Sb precipitates within the box. It is concluded that the interstitials are not associated with precipitate growth, but that they are generated from formation of Sb-vacancy complexes, primarily involving 2 Sb atoms. (C) 2000 American Institute of Physics. [S0021-8979(00)04319-X].

引用

页码：3254 / 3259

页数：6

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