Interplay between anisotropic strain relaxation and uniaxial interface magnetic anisotropy in epitaxial Fe films on (001) GaAs -: art. no. 017205

被引：125

作者：

Thomas, O ^{[1
]}

Shen, Q

Schieffer, P

Tournerie, N

Lépine, B

机构：

[1] Cornell Univ, Dept Mat Sci & Engn, Ithaca, NY 14853 USA

[2] Univ Aix Marseille 3, Fac St Jerome, CNRS, TECSEN,UMR 6122, F-13397 Marseille 20, France

来源：

PHYSICAL REVIEW LETTERS | 2003年 / 90卷 / 01期

关键词：

D O I：

10.1103/PhysRevLett.90.017205

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Grazing incidence x-ray diffraction study of Fe epitaxial ultrathin films (1.5-13 nm) on GaAs (001) reveals an anisotropy of both domain shape and strain, with [110] and [1-10] as the principal directions. It is shown that the observed thickness-dependent strain anisotropy, together with a uniaxial interface term, can provide an unambiguous explanation to the usual in-plane magnetic anisotropy and its thickness dependence observed in this magnetic thin-film system.

引用

页数：4

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