Interplay between anisotropic strain relaxation and uniaxial interface magnetic anisotropy in epitaxial Fe films on (001) GaAs -: art. no. 017205

被引:125
作者
Thomas, O [1 ]
Shen, Q
Schieffer, P
Tournerie, N
Lépine, B
机构
[1] Cornell Univ, Dept Mat Sci & Engn, Ithaca, NY 14853 USA
[2] Univ Aix Marseille 3, Fac St Jerome, CNRS, TECSEN,UMR 6122, F-13397 Marseille 20, France
关键词
D O I
10.1103/PhysRevLett.90.017205
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
Grazing incidence x-ray diffraction study of Fe epitaxial ultrathin films (1.5-13 nm) on GaAs (001) reveals an anisotropy of both domain shape and strain, with [110] and [1-10] as the principal directions. It is shown that the observed thickness-dependent strain anisotropy, together with a uniaxial interface term, can provide an unambiguous explanation to the usual in-plane magnetic anisotropy and its thickness dependence observed in this magnetic thin-film system.
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页数:4
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