Semiconductor nanowhiskers: Synthesis, properties, and applications

被引：171

作者：

Dubrovskii, V. G. ^{[1
,2
]}

Cirlin, G. E. ^{[1
,2
,3
]}

Ustinov, V. M. ^{[1
,2
]}

机构：

[1] Russian Acad Sci, St Petersburg Phys & Technol Ctr Res & Educ, St Petersburg 195220, Russia

[2] Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia

[3] Russian Acad Sci, Inst Analyt Instrumentat, St Petersburg 190103, Russia

来源：

SEMICONDUCTORS | 2009年 / 43卷 / 12期

关键词：

MOLECULAR-BEAM EPITAXY; LIQUID-SOLID MECHANISM; MBE-GROWTH-CONDITIONS; SILICON NANOWIRES; SURFACE-DIFFUSION; GAAS NANOWIRES; THERMAL-CONDUCTIVITY; NANO-WHISKERS; MOVPE GROWTH; DEPENDENCE;

D O I：

10.1134/S106378260912001X

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Recent results of studying the semiconductor's whisker nanocrystals are reviewed. Physical grounds of growing whisker nanocrystals using the mechanism vapor-liquid-crystal are given and the main epitaxial technologies of synthesis of whisker nanocrystals are described. Thermodynamic and kinetic factors controlling the morphological properties, composition, and crystal structure of whisker nanocrystals are considered in detail. The main theoretical models of the growth and structure of whisker nanocrystals are described. The data on physical properties of whisker nanocrystals and possibilities of their use in nanophotonics, nanoelectronics, and nanobiotechnology are presented.

引用

页码：1539 / 1584

页数：46

共 175 条

[1] InGaAs nano-pillar array formation on partially masked InP(III)B by selective area metal-organic vapour phase epitaxial growth for two-dimensional photonic crystal application [J].

Akabori, M ;

Takeda, J ;

Motohisa, J ;

Fukui, T .

NANOTECHNOLOGY, 2003, 14 (10) :1071-1074

[2] An empirical potential approach to wurtzite-zinc-blende polytypism in group III-V semiconductor nanowires [J].

Akiyama, T ;

Sano, K ;

Nakamura, K ;

Ito, T .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2006, 45 (8-11) :L275-L278

[3] Structural stability and electronic structures of InP nanowires: Role of surface dangling bonds on nanowire facets [J].

Akiyama, Toru ;

Nakamura, Kohji ;

Ito, Tomonori .

PHYSICAL REVIEW B, 2006, 73 (23)

[4]

[Anonymous], 1980, COURSE THEORETICAL P

[5]

Barton MV., 1941, J APPL MECH, V8, P97

[6] Synthesis and characterization of ZnO nanowires and their integration into dye-sensitized solar cells [J].

Baxter, J. B. ;

Walker, A. M. ;

van Ommering, K. ;

Aydil, E. S. .

NANOTECHNOLOGY, 2006, 17 (11) :S304-S312

[7] Nanowire-based dye-sensitized solar cells [J].

Baxter, JB ;

Aydil, ES .

APPLIED PHYSICS LETTERS, 2005, 86 (05) :1-3

[8] QUANTUM WIRE LASERS BY OMCVD GROWTH ON NONPLANAR SUBSTRATES [J].

BHAT, R ;

KAPON, E ;

SIMHONY, S ;

COLAS, E ;

HWANG, DM ;

STOFFEL, NG ;

KOZA, MA .

JOURNAL OF CRYSTAL GROWTH, 1991, 107 (1-4) :716-723

[9] Nanowire resonant tunneling diodes [J].

Björk, MT ;

Ohlsson, BJ ;

Thelander, C ;

Persson, AI ;

Deppert, K ;

Wallenberg, LR ;

Samuelson, L .

APPLIED PHYSICS LETTERS, 2002, 81 (23) :4458-4460

[10] One-dimensional heterostructures in semiconductor nanowhiskers [J].

Björk, MT ;

Ohlsson, BJ ;

Sass, T ;

Persson, AI ;

Thelander, C ;

Magnusson, MH ;

Deppert, K ;

Wallenberg, LR ;

Samuelson, L .

APPLIED PHYSICS LETTERS, 2002, 80 (06) :1058-1060

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