Control of direct band gap emission of bulk germanium by mechanical tensile strain

被引：119

作者：

El Kurdi, M. ^{[1
]}

Bertin, H. ^{[1
]}

Martincic, E. ^{[1
]}

de Kersauson, M. ^{[1
]}

Fishman, G. ^{[1
]}

Sauvage, S. ^{[1
]}

Bosseboeuf, A. ^{[1
]}

Boucaud, P. ^{[1
]}

机构：

[1] Univ Paris Sud 11, Inst Elect Fondamentale, CNRS, F-91405 Orsay, France

来源：

APPLIED PHYSICS LETTERS | 2010年 / 96卷 / 04期

关键词：

elemental semiconductors; energy gap; germanium; photoluminescence; ROOM-TEMPERATURE; OPTICAL GAIN; GE; SI;

D O I：

10.1063/1.3297883

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We show that the recombination energy of the direct band gap photoluminescence (PL) of germanium can be controlled by an external mechanical stress. The stress is provided by an apparatus commonly used for bulge or blister test. An energy redshift up to 60 meV is demonstrated for the room temperature PL of a thin germanium membrane (125 nm wavelength shift from 1535 to 1660 nm). This PL shift is correlated with the in-plane tensile strain generated in the film. A biaxial tensile strain larger than 0.6% is achieved by this method. This mechanical strain allows to approach the direct band gap condition for germanium which is of tremendous importance to achieve lasing with this material.

引用

页数：3

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