Phonon-limited electron mobility in ultrathin silicon-on-insulator inversion layers

Phonon-limited mobility in ultrathin silicon-on-insulator inversion layers has been calculated by the Monte Carlo method both at room and at lower temperatures. The phonon-scattering rate has been shown to increase as a consequence of the greater confinement of electrons as the top silicon film thickness shrinks below a determined value. This fact helps to explain the mobility decrease that appears experimentally in these devices. (C) 1998 American Institute of Physics.