Crystal orientation dependence on electrical properties of Pb(Zr,Ti)O3 thick films grown on si substrates by metalorganic chemical vapor deposition

(111)(c)- and (100)(c)-oriented SrRuO3 films were successfully grown on (111)Pt/TiO2/SiO2/(100)Si and (100)LaNiO3/ (111)Pt/TiO2/SiO2/(100)Si substrates, respectively, by RF-magnetron sputtering method. On these (111)c- and (100),oriented SuRuO(3) films, (111)- and (001)/(100)-oriented fiber-textured Pb(Zr0.35Ti0.65)O-3 films with 2.0mum in thickness were grown by metalorganic chemical vapor deposition (MOCVD). Well-saturated polarization-electric field (P-E) hysteresis loops were observed for both films. The remanent polarization (P-r) values of (111)- and (001)/(100)-oriented 2.0mum-thick Pb(Zr,Ti)O-3 (PZT) films were almost the same at approximately 45muC/cm(2) at 200kV/cm, while the coercive field (E-c) values of these films were slight different at 61 kV/cm and 71 kV/cm, respectively. Moreover, the field-induced strains measured by scanning probe microscopy were also almost the same at approximately 0.2% up to 100 kV/cm. These data show the crystal orientation independence of the remanent polarization and field-induced strain of Pb(Zr0.35Ti0.65)O-3 films.