Experimental evidence for a stable GaAs surface near (113)

被引：6

作者：

Geelhaar, L ^{[1
]}

Márquez, J ^{[1
]}

Jacobi, K ^{[1
]}

机构：

[1] Max Planck Gesell, Fritz Haber Inst, D-14195 Berlin, Germany

来源：

PHYSICAL REVIEW B | 2000年 / 62卷 / 11期

关键词：

D O I：

10.1103/PhysRevB.62.6908

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

GaAs surfaces vicinal to (113) with a continuous range of misorientation angles up to 11.5 degrees in all azimuthal directions were created by grinding a spherical depression into (113) oriented samples. Thin homoepitaxial layers were grown onto these samples by molecular beam epitaxy (MBE), and the surfaces were in situ studied by low-energy electron diffraction (LEED) and scanning tunneling microscopy (STM). The surface quality in the depression was verified by reproducing LEED patterns of the (113) and (114) surfaces. A stable GaAs surface was found that is oriented from (113) by 9 degrees+/-2 degrees towards [110]. STM and LEED images of this surface are presented.

引用

页码：6908 / 6911

页数：4

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