Effect of laser irradiation on electron emission from Si field emitter arrays

被引：5

作者：

Takai, M ^{[1
]}

Suzuki, N

Morimoto, H

Hosono, A

Kawabuchi, S

机构：

[1] Osaka Univ, Res Ctr Mat Sci Extreme Condit, Osaka 5608531, Japan

[2] Osaka Univ, Grad Sch Engn Sci, Osaka 5608531, Japan

[3] Mitsubishi Elect Co, Adv Technol R&D Ctr, Amagasaki, Hyogo 661, Japan

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1998年 / 16卷 / 02期

关键词：

D O I：

10.1116/1.589904

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Ultraviolet (UV) laser lights were irradiated on Si field emitter arrays before and during electron emission to investigate the surface cleaning effect of laser light irradiation. UV light irradiation for 2-10 min before electron emission in a vacuum resulted in enhanced electron emission by 50%, which gradually decreased after further aging. Laser light irradiation during electron emission could induce enhanced electron emission by a factor of 2.4 due to photoinduced carrier generation and surface cleaning, and higher electron emission by a factor of 2 than the initial emission was observed even after laser light irradiation and prolonged aging for 20 h. (C) 1998 American Vacuum Society. [S0734-211X(98)01802-2].

引用

页码：780 / 782

页数：3

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