On the environment of optically active Er in Si-electroluminescence devices

被引：33

作者：

Lanzerstorfer, S ^{[1
]}

Palmetshofer, L

Jantsch, W

Stimmer, J

机构：

[1] Johannes Kepler Univ, Inst Expt Phys, A-4040 Linz, Austria

[2] TU Munchen, Walter Schottky Inst, D-85748 Garching, Germany

来源：

APPLIED PHYSICS LETTERS | 1998年 / 72卷 / 07期

关键词：

D O I：

10.1063/1.120900

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report sharp, atomlike electroluminescence spectra close to 1.54 mu m from a low-dose (3.5 x 10(18) cm(-3)) erbium-implanted silicon light-emitting diode operating under forward bias. The well-resolved Stark splitting identifies the isolated interstitial Er with cubic site symmetry as the source. The full width at half maximum of the most intense line is 0.5 nm. A comparison with a highly Er (5 x 10(19) cm(-3)) and O (1 x 10(20) cm(-3)) doped diode with a high doping gradient grown by molecular beam epitaxy and with Er-implanted silica is given with respect to fine structure and thermal quenching. The room-temperature emission of the highly Er and O doped diode is ascribed to Er containing silica precipitates within the c-Si matrix. (C) 1998 American Institute of Physics.

引用

页码：809 / 811

页数：3

共 20 条

[1] LOCAL-STRUCTURE OF 1.54-MU-M-LUMINESCENCE ER-3+ IMPLANTED IN SI [J].

ADLER, DL ;

JACOBSON, DC ;

EAGLESHAM, DJ ;

MARCUS, MA ;

BENTON, JL ;

POATE, JM ;

CITRIN, PH .

APPLIED PHYSICS LETTERS, 1992, 61 (18) :2181-2183

[2] 1.54-MU-M LUMINESCENCE OF ERBIUM-IMPLANTED III-V SEMICONDUCTORS AND SILICON [J].

ENNEN, H ;

SCHNEIDER, J ;

POMRENKE, G ;

AXMANN, A .

APPLIED PHYSICS LETTERS, 1983, 43 (10) :943-945

[3] 1.54-MU-M ELECTROLUMINESCENCE OF ERBIUM-DOPED SILICON GROWN BY MOLECULAR-BEAM EPITAXY [J].

ENNEN, H ;

POMRENKE, G ;

AXMANN, A ;

EISELE, K ;

HAYDL, W ;

SCHNEIDER, J .

APPLIED PHYSICS LETTERS, 1985, 46 (04) :381-383

[4] Mechanism and performance of forward and reverse bias electroluminescence at 1.54 mu m from Er-doped Si diodes [J].

Franzo, G ;

Coffa, S ;

Priolo, F ;

Spinella, C .

JOURNAL OF APPLIED PHYSICS, 1997, 81 (06) :2784-2793

[5] ROOM-TEMPERATURE ELECTROLUMINESCENCE FROM ER-DOPED CRYSTALLINE SI [J].

FRANZO, G ;

PRIOLO, F ;

COFFA, S ;

POLMAN, A ;

CARNERA, A .

APPLIED PHYSICS LETTERS, 1994, 64 (17) :2235-2237

[6] ROOM-TEMPERATURE LIGHT-EMITTING SILICON DIODES FABRICATED BY ERBIUM ION-IMPLANTATION [J].

FRANZO, G ;

PRIOLO, F ;

COFFA, S ;

POLMAN, A .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1995, 96 (1-2) :374-377

[7] Factors governing the photoluminescence yield of erbium implanted silicon [J].

Jantsch, W ;

Przybylinska, H ;

Skierbiszewski, C ;

Lanzerstorfer, S ;

Palmetshofer, L .

RARE EARTH DOPED SEMICONDUCTORS II, 1996, 422 :101-111

[8]

JANTSCH W, 1995, P 22 INT C PHYS SEM, P2411

[9] IMPURITY ENHANCEMENT OF THE 1.54-MU-M ER3+ LUMINESCENCE IN SILICON [J].

MICHEL, J ;

BENTON, JL ;

FERRANTE, RF ;

JACOBSON, DC ;

EAGLESHAM, DJ ;

FITZGERALD, EA ;

XIE, YH ;

POATE, JM ;

KIMERLING, LC .

JOURNAL OF APPLIED PHYSICS, 1991, 70 (05) :2672-2678

[10] Donor activity of ion-implanted erbium in silicon [J].

Palmetshofer, L ;

SuprunBelevich, Y ;

Stepikhova, M .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1997, 127 :479-482

← 1 2 →