Threshold current reduction in InGaN MQW laser diode with λ/4 air/semiconductor Bragg reflectors

被引：13

作者：

Marinelli, C ^{[1
]}

Sargent, LJ

Wonfor, A

Rorison, JM

Penty, RV

White, IH

Heard, PJ

Hasnain, G

Schneider, R

机构：

[1] Univ Bristol, Ctr Commun Res, Bristol BS8 1TR, Avon, England

[2] Univ Bristol, Interface Anal Ctr, Bristol BS2 8BS, Avon, England

[3] Agilent Labs, Palo Alto, CA 94303 USA

来源：

ELECTRONICS LETTERS | 2000年 / 36卷 / 20期

关键词：

D O I：

10.1049/el:20001230

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A 13% reduction in the threshold current density of InGaN laser diodes is demonstrated upon the introduction of two 5 lambda/4 air/nitride Bragg reflectors. These are defined at one end of the laser cavity by means of focused ion beam etching.

引用

页码：1706 / 1707

页数：2

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