Dilute magnetic semiconducting oxides

被引:495
作者
Pearton, SJ [1 ]
Heo, WH
Ivill, M
Norton, DP
Steiner, T
机构
[1] Univ Florida, Dept Mat Sci & Engn, Gainesville, FL 32611 USA
[2] USAF, Off Sci Res, Arlington, VA 22217 USA
关键词
D O I
10.1088/0268-1242/19/10/R01
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A review of recent results on transition metal doping of electronic oxides such as ZnO, TiO2, SnO2, BaTiO3, Cu2O, SrTiO3 and KTaO3 is presented. There is interest in achieving ferromagnetism with Curie temperatures above room temperature in such materials for applications in the field of spintronic devices, in which the spin of, the carriers is exploited. The incorporation of several atomic per cent of the transition metals without creation of second phases appears possible under optimized synthesis conditions, leading to ferromagnetism. Pulsed laser deposition, reactive sputtering, molecular beam epitaxy and ion implantation have all been used to produce the oxide-based dilute magnetic materials. The mechanism is still under debate, with carrier-induced, double-exchange and bound magnetic polaron formation all potentially playing a role depending on the conductivity type and level in the material.
引用
收藏
页码:R59 / R74
页数:16
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