Calculating Kelvin force microscopy signals from static force fields

被引:24
作者
Borowik, Lukasz [1 ]
Kusiaku, Koku [1 ]
Theron, Didier [1 ]
Melin, Thierry [1 ]
机构
[1] CNRS, Inst Elect Microelect & Nanotechnol, UMR 8520, F-59652 Villeneuve Dascq, France
关键词
RESOLUTION;
D O I
10.1063/1.3323098
中图分类号
O59 [应用物理学];
学科分类号
摘要
We present an analytical formula to achieve numerical simulations of Kelvin force microscopy (KFM) signals from static force fields, which can be employed to describe amplitude-modulation or frequency-modulation KFM, as well as simultaneous topography and KFM modes for which the tip probe exhibits a nonzero oscillation during KFM imaging. This model is shown to account for side-capacitance and nonlinear effects taking place in KFM experiments, and can therefore be used conveniently to extract quantitative information from KFM experiments at the nanoscale. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3323098]
引用
收藏
页数:3
相关论文
共 15 条
[1]   Determination of the electrostatic lever arm of carbon nanotube field effect transistors using Kelvin force microscopy [J].
Brunel, David ;
Deresmes, Dominique ;
Melin, Thierry .
APPLIED PHYSICS LETTERS, 2009, 94 (22)
[2]   Real versus measured surface potentials in scanning Kelvin probe microscopy [J].
Charrier, Dimitri S. H. ;
Kemerink, Martijn ;
Smalbrugge, Barry E. ;
de Vries, Tjibbe ;
Janssen, Rene A. J. .
ACS NANO, 2008, 2 (04) :622-626
[3]   Dynamic behavior of amplitude detection Kelvin force microscopy in ultrahigh vacuum [J].
Diesinger, H. ;
Deresmes, D. ;
Nys, J. -P. ;
Melin, T. .
ULTRAMICROSCOPY, 2010, 110 (02) :162-169
[4]   Forces and frequency shifts in atomic-resolution dynamic-force microscopy [J].
Giessibl, FJ .
PHYSICAL REVIEW B, 1997, 56 (24) :16010-16015
[5]   Amplitude or frequency modulation-detection in Kelvin probe force microscopy [J].
Glatzel, T ;
Sadewasser, S ;
Lux-Steiner, MC .
APPLIED SURFACE SCIENCE, 2003, 210 (1-2) :84-89
[6]   Determination of effective tip geometries in Kelvin probe force microscopy on thin insulating films on metals [J].
Glatzel, Th ;
Zimmerli, L. ;
Koch, S. ;
Such, B. ;
Kawai, S. ;
Meyer, E. .
NANOTECHNOLOGY, 2009, 20 (26)
[7]   Resolution and contrast in Kelvin probe force microscopy [J].
Jacobs, HO ;
Leuchtmann, P ;
Homan, OJ ;
Stemmer, A .
JOURNAL OF APPLIED PHYSICS, 1998, 84 (03) :1168-1173
[8]   SILICON PN JUNCTION IMAGING AND CHARACTERIZATIONS USING SENSITIVITY ENHANCED KELVIN PROBE FORCE MICROSCOPY [J].
KIKUKAWA, A ;
HOSAKA, S ;
IMURA, R .
APPLIED PHYSICS LETTERS, 1995, 66 (25) :3510-3512
[9]   Lateral resolution and potential sensitivity in Kelvin probe force microscopy: Towards understanding of the sub-nanometer resolution [J].
Krok, F. ;
Sajewicz, K. ;
Konior, J. ;
Goryl, M. ;
Piatkowski, P. ;
Szymonski, M. .
PHYSICAL REVIEW B, 2008, 77 (23)
[10]   Electric force microscopy of individually charged nanoparticles on conductors:: An analytical model for quantitative charge imaging -: art. no. 035321 [J].
Mélin, T ;
Diesinger, H ;
Deresmes, D ;
Stiévenard, D .
PHYSICAL REVIEW B, 2004, 69 (03)