Step-driven molecular adsorption of Sb on Si(111)

被引：18

作者：

Ladeveze, M

Treglia, G

Muller, P

d'Avitaya, FA

机构：

[1] Univ Aix Marseille 2, CNRS, CRMC2, F-13288 Marseille 9, France

[2] Univ Aix Marseille 3, CNRS, CRMC2, F-13288 Marseille, France

来源：

SURFACE SCIENCE | 1998年 / 395卷 / 2-3期

关键词：

anitomy; Auger electron spectroscopy; chemisorption; molecular beam epitaxy; molecular dynamics; semi-empirical models and model calculations silicon; single crystal surfaces; surface structure; morphology; roughness; and topography; thermal desorption spectroscopy;

D O I：

10.1016/S0039-6028(97)00635-3

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Adsorption of Sb on a misoriented Si(111) surface is investigated by thermodesorption Auger spectroscopy. The spectra reveal that, in the submonolayer range, new adsorption states appear for the vicinal surface which do not exist for the nominal one. Quenched molecular-dynamics simulations, in which Si and Sb are modeled by many-body tight-binding potentials, allow us to interpret these new states as due to a molecular adsorption at the steps instead of a dissociative one on the terraces. (C) 1998 Elsevier Science B.V.

引用

页码：317 / 325

页数：9

共 20 条

[1] SB ADSORPTION ON SI (111) ANALYZED BY ELLIPSOMETRY AND REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION - CONSEQUENCES FOR SB DOPING IN SI MOLECULAR-BEAM EPITAXY [J].