Giant piezoresistance and its origin in Si(111) nanowires: First-principles calculations

被引：65

作者：

Cao, J. X. ^{[1
]}

Gong, X. G.

Wu, R. Q.

机构：

[1] Univ Calif Irvine, Dept Phys & Astron, Irvine, CA 92697 USA

[2] Xiangtan Univ, Dept Phys, Xiangtan 411105, Peoples R China

[3] Fudan Univ, Surface Sci Lab State Key, Shanghai 200433, Peoples R China

[4] Fudan Univ, Dept Phys, Shanghai 200433, Peoples R China

来源：

PHYSICAL REVIEW B | 2007年 / 75卷 / 23期

关键词：

SILICON; GROWTH; NANOCRYSTALS;

D O I：

10.1103/PhysRevB.75.233302

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Through systematic first-principles calculations, we found extraordinarily high piezoresistance coefficients in a pristine Si(111) nanowire. This stems from interplay between the presence of two surface states with different localizations and unusual surface relaxation. Lattice compression along the axis causes switch between light and heavy surface states and, subsequently, alters the effective masses of carriers. Fascinatingly, model calculations produced main features of experimental data [R. R. He and P. D. Yang, Nat. Nanotechnol. 1, 42 (2006)] despite much difference in wire sizes and surface conditions.

引用

页数：4

共 24 条

[1] Semiconductor clusters, nanocrystals, and quantum dots [J].

Alivisatos, AP .

SCIENCE, 1996, 271 (5251) :933-937

[2] ELECTRONIC SPECTROSCOPY AND PHOTOPHYSICS OF SI NANOCRYSTALS - RELATIONSHIP TO BULK C-SI AND POROUS SI [J].

BRUS, LE ;

SZAJOWSKI, PF ;

WILSON, WL ;

HARRIS, TD ;

SCHUPPLER, S ;

CITRIN, PH .

JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 1995, 117 (10) :2915-2922

[3] GROWTH AND SINTERING OF FULLERENE NANOTUBES [J].

COLBERT, DT ;

ZHANG, J ;

MCCLURE, SM ;

NIKOLAEV, P ;

CHEN, Z ;

HAFNER, JH ;

OWENS, DW ;

KOTULA, PG ;

CARTER, CB ;

WEAVER, JH ;

RINZLER, AG ;

SMALLEY, RE .

SCIENCE, 1994, 266 (5188) :1218-1222

[4] In situ band gap engineering of carbon nanotubes [J].

Crespi, VH ;

Cohen, ML ;

Rubio, A .

PHYSICAL REVIEW LETTERS, 1997, 79 (11) :2093-2096

[5]

Ding JW, 2002, PHYS REV B, V66, DOI 10.1103/PhysRevB.66.073401

[6] Piezoresistance of carbon nanotubes on deformable thin-film membranes [J].

Grow, RJ ;

Wang, Q ;

Cao, J ;

Wang, DW ;

Dai, HJ .

APPLIED PHYSICS LETTERS, 2005, 86 (09) :1-3

[7] Giant piezoresistance effect in silicon nanowires [J].

He, Rongrui ;

Yang, Peidong .

NATURE NANOTECHNOLOGY, 2006, 1 (01) :42-46

[8] Stress-dependent hole effective masses and piezoresistive properties of p-type monocrystalline and polycrystalline silicon [J].

Kleimann, P ;

Semmache, B ;

Le Berre, M ;

Barbier, D .

PHYSICAL REVIEW B, 1998, 57 (15) :8966-8971

[9] Efficiency of ab-initio total energy calculations for metals and semiconductors using a plane-wave basis set [J].

Kresse, G ;

Furthmuller, J .

COMPUTATIONAL MATERIALS SCIENCE, 1996, 6 (01) :15-50

[10] Small-diameter silicon nanowire surfaces [J].

Ma, DDD ;

Lee, CS ;

Au, FCK ;

Tong, SY ;

Lee, ST .

SCIENCE, 2003, 299 (5614) :1874-1877

← 1 2 3 →