Bonding of nitrogen in dilute GaInAsN and AlGaAsN studied by Raman spectroscopy

被引：18

作者：

Wagner, J ^{[1
]}

Geppert, T ^{[1
]}

Köhler, K ^{[1
]}

Ganser, P ^{[1
]}

Maier, M ^{[1
]}

机构：

[1] Fraunhofer Inst Appl Solid State Phys, D-79108 Freiburg, Germany

来源：

SOLID-STATE ELECTRONICS | 2003年 / 47卷 / 03期

关键词：

dilute group III-arsenide/nitrides; local bonding; Raman spectroscopy;

D O I：

10.1016/S0038-1101(02)00389-1

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

To gain information on the local bonding of the nitrogen, Ga1-xInxAs1-yNy with x less than or equal to 0.12 and y less than or equal to 0.04 and AlxGa1-xAs1-yNy with x less than or equal to 0.05 and y less than or equal to 0.04 have been studied by Raman spectroscopy. When adding In to GaAsN, the nitrogen-induced vibrational mode near 470 cm(-1) observed in GaAsN was found to split into up to three components, with one of the In-N related modes at higher and the other at lower frequencies than the Ga-N mode. Upon thermal annealing, the relative mode intensities were found to change in favor of the In-N related modes, indicating a redistribution of the III-N bonds. For AlxGa1-xAs0.99N0.01, in contrast, the almost exclusive formation of complexes with Al-to-N bonding was observed already for a low Al content of x = 0.05, as seen from a complete switch in mode intensity from the Ga-N mode at 470 cm(-1) to a new Al-N related mode near 450 cm(-1). This result was confirmed by a corresponding analysis of the quinary compound AlGaInAsN. (C) 2002 Elsevier Science Ltd. All rights reserved.

引用

页码：461 / 465

页数：5

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