Demonstration of nonpolar m-plane InGaN/GaN laser diodes

被引：212

作者：

Schmidt, Mathew C. ^{[1
]}

Kim, Kwang-Choong

Farrell, Robert M.

Feezell, Daniel F.

Cohen, Daniel A.

Saito, Makoto

Fujito, Kenji

Speck, James S.

Denbaars, Steven P.

Nakamura, Shuji

机构：

[1] Univ Calif Santa Barbara, Dept Mat, UCSB Grp, Santa Barbara, CA 93106 USA

[2] Univ Calif Santa Barbara, ERATO JST, UCSB Grp, Santa Barbara, CA 93106 USA

[3] Mitsubishi Chem Corp, Optoelect Lab, Ibaraki 3001295, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 2007年 / 46卷 / 8-11期

关键词：

GaN; nonpolar; m-plane; laser diode;

D O I：

10.1143/JJAP.46.L190

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The first nonpolar m-plane (1 (1) over bar 00) nitride laser diodes (LDs) have been realized on low extended defect bulk m-plane GaN substrates. The LDs were grown by metal organic chemical vapor deposition (MOCVD) using conditions similar to that of c-plane device growth. Broad area lasers were fabricated and tested under pulsed conditions. Lasing was observed at duty cycles as high as 10%. These laser diodes had threshold current densities (J(th)) as low as 7.5 kA/cm(2). Stimulated emission was observed at 405.5 nm, with a spectral line-width of 1 nm.

引用

页码：L190 / L191

页数：2

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