Influence of various activation temperatures on the optical degradation of Mg doped InGaN/GaN MQW blue LEDs

被引:30
作者
Youn, CJ [1 ]
Jeong, TS
Han, MS
Yang, JW
Lim, KY
Yu, HW
机构
[1] Chonbuk Natl Univ, Semicond Phys Res Ctr, Jeonju 561756, South Korea
[2] LG Philips, LCD TFT Team 2, Gumi 730350, South Korea
关键词
luminescence; metal organic chemical vapor deposition; quantum wells; InGaN; light emitting diodes;
D O I
10.1016/S0022-0248(02)02462-4
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
GaN-based InGaN/GaN multi-quantum-well light emitting diode (MQW LED) structures were grown by metal organic chemical vapor deposition method. The optical properties of the LED structure have been investigated by using the photoluminescence and electroluminescence measurement. Both photoluminescence and electroluminescence results indicate that near pure InN clusters exist within the InGaN layers, which are responsible for the light emission in the LED. With increasing the Mg activation temperature of p-GaN layer, the optical properties of the LED structure tended to significantly degrade. This degradation was found to be deeply related to the variation of InN clusters in the active region. By the current-voltage measurement, a large forward voltage variation was observed. The voltage variation is caused to the conductivity variation of the p-GaN layer due to the different activation temperature. The turn-on voltage obtained from the best LED was 2.56 V and the forward voltage measured at 20 mA was 3.5 V. On the basis of these results, activation of the Mg-doped p-GaN layer must be carried out at the lowest possible value so as to obtain the better performance of LEDs. (C) 2003 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:331 / 338
页数:8
相关论文
共 31 条
[1]   Electroluminescence of a cubic GaN/GaAs (001) p-n junction [J].
As, DJ ;
Richter, A ;
Busch, J ;
Lübbers, M ;
Mimkes, J ;
Lischka, K .
APPLIED PHYSICS LETTERS, 2000, 76 (01) :13-15
[2]   Spatially resolved cathodoluminescence spectra of InGaN quantum wells [J].
Chichibu, S ;
Wada, K ;
Nakamura, S .
APPLIED PHYSICS LETTERS, 1997, 71 (16) :2346-2348
[3]   Spontaneous emission of localized excitons in InGaN single and multiquantum well structures [J].
Chichibu, S ;
Azuhata, T ;
Sota, T ;
Nakamura, S .
APPLIED PHYSICS LETTERS, 1996, 69 (27) :4188-4190
[4]   Localized quantum well excitons in InGaN single-quantum-well amber light-emitting diodes [J].
Chichibu, SF ;
Azuhata, T ;
Sota, T ;
Mukai, T ;
Nakamura, S .
JOURNAL OF APPLIED PHYSICS, 2000, 88 (09) :5153-5157
[5]   Effective band gap inhomogeneity and piezoelectric field in InGaN/GaN multiquantum well structures [J].
Chichibu, SF ;
Abare, AC ;
Minsky, MS ;
Keller, S ;
Fleischer, SB ;
Bowers, JE ;
Hu, E ;
Mishra, UK ;
Coldren, LA ;
DenBaars, SP ;
Sota, T .
APPLIED PHYSICS LETTERS, 1998, 73 (14) :2006-2008
[6]   Effects of thermal annealing on the luminescence and structural properties of high indium-content InGaN/GaN quantum wells [J].
Chuo, CC ;
Lee, CM ;
Nee, TE ;
Chyi, JI .
APPLIED PHYSICS LETTERS, 2000, 76 (26) :3902-3904
[7]   Interdiffusion of In and Ga in InGaN/GaN multiple quantum wells [J].
Chuo, CC ;
Lee, CM ;
Chyi, JI .
APPLIED PHYSICS LETTERS, 2001, 78 (03) :314-316
[8]   Optoelectronic characterization of blue InGaN/GaN LEDS grown by MBE [J].
Dalmasso, S ;
Damilano, B ;
Grandjean, N ;
Massies, J ;
Leroux, M ;
Reverchon, JL ;
Duboz, JY .
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2001, 82 (1-3) :256-258
[9]   Tunneling current and electroluminescence in InGaN: Zn,Si/AlGaN/GaN blue light emitting diodes [J].
Eliseev, PG ;
Perlin, P ;
Furioli, J ;
Sartori, P ;
Mu, J ;
Osinski, M .
JOURNAL OF ELECTRONIC MATERIALS, 1997, 26 (03) :311-319
[10]  
GOTZ W, 1995, APPL PHYS LETT, V67, P2666, DOI 10.1063/1.114330