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Metal gettering by defective regions in carbon-implanted silicon

被引：5
作者：
Kogler, R
Kaschny, JR
Yankov, RA
Werner, P
Danilin, AB
Skorupa, W
机构：
[1] Rossendorf Inc, Forschungszentrum Rossendorf EV, D-01314 Dresden, Germany
[2] Max Planck Inst Mikrostrukturphys, D-06120 Halle, Germany
[3] Ctr Anal Substances, Moscow 111524, Russia
来源：
SOLID STATE PHENOMENA | 1997年 / 57-8卷
关键词：
ion implantation; silicon; defects; metal; gettering;
D O I：
10.4028/www.scientific.net/SSP.57-58.63
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Experiments are reported here which study the behaviour of Cu and Fe gettered at defects created by ion implantation of C into Si The stability of the binding of metals to the C-related defects during annealing has been investigated. Cu has been found to be released during an anneal at 700 degrees C whereas Fe remains on gettering sites up to a temperature of 1000 degrees C. The gettering mechanism of Cu to the C-related defects has been determined to be a relaxation-induced process. Fe is gettered via a segregation-induced process which operates at high temperature as well.
引用
收藏
页码：63 / 68
页数：6
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