vertical cavity surface emitting lasers;
chemical vapour deposition;
D O I:
10.1049/el:19971285
中图分类号:
TM [电工技术];
TN [电子技术、通信技术];
学科分类号:
0808 ;
0809 ;
摘要:
The authors have realised an InGaAs/GaAs vertical cavity surface emitting laser grown on a GaAs (311)B substrate by metalorganic chemical-vapour deposition. A carbon auto-doping technique was used to avoid the difficulty of p-type doping (>10(19)cm(-3)) AlAs for a distributed Bragg reflector. A low electrical resistance of p-type GaAs/AlAs DBRs on GaAs (311)B was obtained by using delta doping and compositional grading layers. The lowest threshold was 16mA at room temperature CW operation for a 50 mu m diameter device. The threshold current density is 810A/cm(2) which is reasonably low for non-optimised experimental conditions. The polarisation slate was stable.