MOCVD grown InGaAs/GaAs vertical cavity surface emitting laser on GaAs (311)B substrate

被引:4
作者
Mizutani, A [1 ]
Hatori, N [1 ]
Nishiyama, N [1 ]
Koyama, F [1 ]
Iga, K [1 ]
机构
[1] Tokyo Inst Technol, Precis & Intelligence Lab, Midori Ku, Yokohama, Kanagawa 226, Japan
关键词
vertical cavity surface emitting lasers; chemical vapour deposition;
D O I
10.1049/el:19971285
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The authors have realised an InGaAs/GaAs vertical cavity surface emitting laser grown on a GaAs (311)B substrate by metalorganic chemical-vapour deposition. A carbon auto-doping technique was used to avoid the difficulty of p-type doping (>10(19)cm(-3)) AlAs for a distributed Bragg reflector. A low electrical resistance of p-type GaAs/AlAs DBRs on GaAs (311)B was obtained by using delta doping and compositional grading layers. The lowest threshold was 16mA at room temperature CW operation for a 50 mu m diameter device. The threshold current density is 810A/cm(2) which is reasonably low for non-optimised experimental conditions. The polarisation slate was stable.
引用
收藏
页码:1877 / 1878
页数:2
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