Pressure sensing using a completely flexible organic transistor

被引:76
作者
Manunza, I. [1 ]
Bonfiglio, A.
机构
[1] Univ Cagliari, CNISM, Dept Elect & Elect Engn, I-09124 Cagliari, Italy
[2] CNR, INFM, Modena, Italy
关键词
organic field effect transistor; pressure detection; field effect sensor; organic semiconductor;
D O I
10.1016/j.bios.2007.01.021
中图分类号
Q6 [生物物理学];
学科分类号
071011 ;
摘要
In this paper, we report on pressure sensors based on completely flexible organic thin film transistors (OTFTs). A flexible and transparent plastic foil (Mylar) is employed both as substrate and gate dielectric. Gold source and drain electrodes are patterned on the upper side of the foil while the gate electrode lies on the opposite side; a vacuum-sublimed pentacene film is used as active layer. The pressure dependence of the output current has been investigated by applying to the gate side of the device a mechanical stimulus by means of a pressurized airflow. Experimental results show a reversible dependence of the current on the pressure. The data analysis suggests that the current variations are due to pressure-induced variations of mobility, threshold voltage and possibly contact resistance. The drain current variation is reproducible, linear and reversible even though it displays a hysteresis. Moreover, the sensor responds very fast to the mechanical stimulus (i.e. within tens-hundreds of milliseconds) but the time required to reach the steady state is much higher (tens-hundreds of seconds). Electrical characteristics with and without applied pressure have been carried out in air without any extra ad hoc read-out circuit or equipment. The reported devices show potential advantages of flexibility of the structure, low cost andversatility of the device structure for sensor technologies. Many innovative and attractive applications as wearable electronics, e-textiles, e-skin for robots can be considered. (c) 2007 Elsevier B.V. All rights reserved.
引用
收藏
页码:2775 / 2779
页数:5
相关论文
共 19 条
  • [1] Field-effect detection of chemical species with hybrid organic/inorganic transistors
    Bartic, C
    Campitelli, A
    Borghs, S
    [J]. APPLIED PHYSICS LETTERS, 2003, 82 (03) : 475 - 477
  • [2] A completely flexible organic transistor obtained by a one-mask photolithographic process
    Bonfiglio, A
    Mameli, F
    Sanna, O
    [J]. APPLIED PHYSICS LETTERS, 2003, 82 (20) : 3550 - 3552
  • [3] Soft lithography fabrication of all-organic bottom-contact and top-contact field effect transistors
    Cosseddu, P
    Bonfiglio, A
    [J]. APPLIED PHYSICS LETTERS, 2006, 88 (02) : 1 - 3
  • [4] Large-scale complementary integrated circuits based on organic transistors
    Crone, B
    Dodabalapur, A
    Lin, YY
    Filas, RW
    Bao, Z
    LaDuca, A
    Sarpeshkar, R
    Katz, HE
    Li, W
    [J]. NATURE, 2000, 403 (6769) : 521 - 523
  • [5] Mechanical force sensors using organic thin-film transistors -: art. no. 093708
    Darlinski, G
    Böttger, U
    Waser, R
    Klauk, H
    Halik, M
    Zschieschang, U
    Schmid, G
    Dehm, C
    [J]. JOURNAL OF APPLIED PHYSICS, 2005, 97 (09)
  • [6] The path to ubiquitous and low-cost organic electronic appliances on plastic
    Forrest, SR
    [J]. NATURE, 2004, 428 (6986) : 911 - 918
  • [7] Organic thin film transistors: From theory to real devices
    Horowitz, G
    [J]. JOURNAL OF MATERIALS RESEARCH, 2004, 19 (07) : 1946 - 1962
  • [8] Cut-and-paste customization of organic FET integrated circuit and its application to electronic artificial skin
    Kawaguchi, H
    Someya, T
    Sekitani, T
    Sakurai, T
    [J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2005, 40 (01) : 177 - 185
  • [9] Hysteresis in organic field-effect devices: Simulated effects due to trap recharging
    Lindner, T
    Paasch, G
    Scheinert, S
    [J]. JOURNAL OF APPLIED PHYSICS, 2005, 98 (11)
  • [10] Flexible, organic, ion-sensitive field-effect transistor
    Loi, A
    Manunza, I
    Bonfiglio, A
    [J]. APPLIED PHYSICS LETTERS, 2005, 86 (10) : 1 - 3